A team from National Taiwan University’s (NTU) Department of Physics, in collaboration with other research institutions, has pioneered a new technique that allows for direct measurements of electron behavior in two-dimensional semiconductor transistors. That announcement came at the National Science and Technology Council (NSTC) press conference on Thursday, July 16.

The research team was led by NTU Department of Physics Professor Chiu Ya-ping (邱雅萍) and worked in collaboration with National Taiwan Normal University and the National University of Singapore. The team was able to directly measure the electron transfer length at the metal-semiconductor contact edge in a 2D semiconductor transistor under real operating conditions. This was previously done through theoretical estimations. The new technique provides a critical experimental tool for the scaling of next-generation semiconductor devices.

Chiu said that the breakthrough enables more precise analysis of different material combinations and contact interface quality. She expects continued collaboration with industry to accelerate the development of advanced semiconductor technology.

The findings were published in the journal Nature earlier in July.